한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Photoluminescence properties of N-doped and nominally undoped p-type ZnO thin films

  • Jin, Hu-Jie (School of Electrical Electronic and Information Engineering, WRISS, Wonkwang University) ;
  • Jeong, Yun-Hwan (School of Electrical Electronic and Information Engineering, WRISS, Wonkwang University) ;
  • Park, Choon-Bae (School of Electrical Electronic and Information Engineering, WRISS, Wonkwang University)
  • 발행 : 2008.04.25
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초록

The realization and origin of p-type ZnO are main issue for photoelectronic devices based on ZnO material. N-doped and nominally undoped p-type ZnO films were achieved on silicon (100) and homo-buffer layers by RF magnetron sputtering and post in-situ annealing. The undoped film shows high hole mobility of 1201 $cm^2V^{-1}s^{-1}$ and low resistivity of $0.0454\Omega{\cdot}cm$ with hole concentration of $1.145\times10^{17}cm^{-3}$. The photoluminescence(PL) spectra show the emissions related to FE, DAP and defects of $V_{Zn}$, $V_O$, $Zn_O$, $O_i$ and $O_{Zn}$.

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