Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)

The Korean Institute of Surface Engineering (한국표면공학회)
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Etching characteristics of ArF and EUV resists in dual-frequency superimposed capacitively coupled $CF_{4}/O_{2}/Ar$ and $CF_{4}/CHF_{3}/O_{2}$/Ar plasmas

  • 권봉수 (성균관대학교 신소재공학부) ;
  • 김진성 (성균관대학교 신소재공학부) ;
  • 박영록 (성균관대학교 신소재공학부) ;
  • 안정호 (성균관대학교 신소재공학부) ;
  • 문학기 (성균관대학교 신소재공학부) ;
  • 정창룡 (성균관대학교 신소재공학부) ;
  • 허욱 (성균관대학교 신소재공학부) ;
  • 박지수 (성균관대학교 신소재공학부) ;
  • 이내응 (성균관대학교 신소재공학부) ;
  • 이성권 (하이닉스 반도체)
  • Published : 2009.05.27
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Abstract

In this study, the deformation and etch characteristics of ArF and EUV photoresists were compared in a dual frequency superimposed capacitively coupled plasma (DFS-CCP) etcher systems using $CF_{4}/O_{2}/Ar$ and $CF_{4}/CHF_{3}/O_{2}/Ar$ mixture gas chemistry which are typically used for BARC open and $Si_{3}N_{4}$ teching chemistry, respectively. Etch rate of the resists tend to increase with low-frequency source power ($P_{LF}$) and high-frequency source ($f_{HF}$). The etch rate of ArF resist was hgither than that of EUV resist.

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