Infinite selective dry etching of ITO binary mask structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP)

  • Park, Y.R. (School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Chang, C.R. (School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Heo, W. (School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Kwon, B.S. (School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Park, J.S. (School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Lee, N.E. (School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Kang, H.Y. (Department of Physics, Inha University) ;
  • HwangBo, C.K. (Department of Physics, Inha University) ;
  • Seo, Hwan-Seok (Photomask Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.)
  • Published : 2009.05.27