Fully Cu-based Gate and Source/Drain Interconnections for Ultrahigh-Definition LCDs

  • Kugimiya, Toshihiro (Sputtering Target Division, KOBELCO RESEARCH INSTITUTE, INC.) ;
  • Goto, Hiroshi (Electronics Research laboratory, KOBE STEEL, LTD.) ;
  • Hino, Aya (Electronics Research laboratory, KOBE STEEL, LTD.) ;
  • Nakai, Junichi (Electronics Research laboratory, KOBE STEEL, LTD.) ;
  • Yoneda, Yoichiro (Sputtering Target Division, KOBELCO RESEARCH INSTITUTE, INC.) ;
  • Kusumoto, Eisuke (Sputtering Target Division, KOBELCO RESEARCH INSTITUTE, INC.)
  • Published : 2009.10.12

Abstract

Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.

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