한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Atmospheric Pressure Plasma Ashing of Photoresist Using Pin to Plate Dielectric Barrier Discharge

  • Park, Jae-Beom (SKKU Advanced Institute of Nano Technology(SAINT), Sungkyunkwan Univ.) ;
  • Oh, Jong-Sik (Dept. of Advanced Materials Engineering, Sungkyunkwan Univ.) ;
  • Yeom, Geun-Young (SKKU Advanced Institute of Nano Technology(SAINT), Sungkyunkwan Univ.)
  • Published : 2009.10.12
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Abstract

In this paper, we studied about atmospheric pressure remote plasma ashing of photoresist(PR), by using a modified dielectric barrier discharge(DBD). The effect of various gas combinations such as $N_2/O_2$, $N_2/O_2+SF_6$ on the changes PR ashing rate was investigated as a function of power. The maximum PR ashing rate of 1850 nm/min was achieved at $N_2$ (70 slm)/ $O_2$ (200 sccm) + $SF_6$ (3 slm). We found that as the oxygen and fluorine radical peaks were increased, the ashing rate is increased, too.

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