Cu(In,Ga)$Se_2$ Absorber Layer Prepared by Electron Beam Evaporation Method for Thin Film Solar Cell

Cu(In,Ga)$Se_2$ (CIGS) thin films were formed using CIGS bulk by electron-beam evaporation method with an evaporation current from 20 mA to 90 mA. The experimental results showed that the chemical compositions and the properties of CIGS films varied with the different evaporation current. The Cu-rich CIGS film was deposited successfully with a band gap of 1.20 eV when the evaporation current was 90 mA.