Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Characteristics of $TiO_2$ thin films on Working pressure of RF sputter

RF스퍼터 공정압력의 변화에 따른 $TiO_2$ 박막의 특성

  • Jin, Young-Sam (Department of Electrical Engineering, Kyungwon University) ;
  • Kim, Kyung-Hwan (Department of Electrical Engineering, Kyungwon University) ;
  • Choi, Myung-Kyu (Department of Electrical Engineering, Kyungwon University) ;
  • Choi, Wook-Hyung (Department of Electrical Engineering, Kyungwon University)
  • 진영삼 (경원대학교 전기공학과) ;
  • 김경환 (경원대학교 전기공학과) ;
  • 최명규 (경원대학교 전기공학과) ;
  • 최형욱 (경원대학교 전기공학과)
  • Published : 2009.06.18
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Abstract

$TiO_2$ thin films were deposited on si wafer and glass substrates by rf magnetron sputtering. The films were coated under argon atmosphere at different working pressures: 3mTorr, 5mTorr, 7mTorr, 10mTorr. The films were annealed at $550^{\circ}C$ for 5h after deposition. Film structures were analyzed with XRD, As the increase of working pressure, $TiO_2$ films have been good crystallinity. At 3mTorr and 5mTorr, the films were observed in rutile phase and anatase phase.

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