Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Electrical properties of Metal-Oxide-Semiconductor (MOS) capacitor formed by oxidized-SiN

Oxidized-SiN으로 형성된 4H-SiC MOS capacitor.의 전기적 특성

  • Published : 2009.04.03
Download PDF
⟨ Previous Next ⟩

Abstract

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with thin (${\approx}10\;nm$) Inductive-Coupled Plasma (ICP) CVD $Si_xN_y$ dielectric layers and investigated electrical properties of nitrided $SiO_2$/4H-SiC interface after oxidizing the $Si_xN_y$ in dry oxidation and/or $N_2$ annealing. An improvement of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements if compared with non-annealed oxidized-SiN. The improvements of SiC MOS capacitors formed by oxidized-SiN have been explained in this paper.

Keywords