한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Ni로 유도된 Large-grain TFT의 전기적 특성

Electrical characteristics of Large-grain TFT induced with Ni

  • 이진혁 (성균관대학교 정보통신공학부) ;
  • 이원백 (성균관대학교 정보통신공학부) ;
  • 이준신 (성균관대학교 정보통신공학부)
  • Lee, Jin-Hyuk (Sungkyunkwan University School of Information and Communication Engineering) ;
  • Lee, Won-Baek (Sungkyunkwan University School of Information and Communication Engineering) ;
  • Yi, Jun-Sin (Sungkyunkwan University School of Information and Communication Engineering)
  • 발행 : 2010.06.16
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초록

Electrical characteristics of Large-grain silicon with Ni-induced crystallization which gate insulator is made of 80 nm $SiO_2$ and 20 nm SiNx was fabricated and measured with different channel widths, channel length fixed $10{\mu}m$. Focusing on the changes of channel widths from $4{\mu}m$ to $40{\mu}m$. Field-effect mobility decreased from 111.30 to $94.10\;cm^2/V_s$ when the channel widths increased. Still threshold voltage was almost similar with -1.06V.

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