한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.368-368
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- 2010
온도 변화 및 Gate bias stress time에 따른 MICC, ELA TFT성능 변화 비교 분석
Analysis of MICC, ELA TFT performance transition according to substrate temperature and gate bias stress time variation
- Yi, Seung-Ho (Sungkyunkwan University) ;
- Lee, Won-Baek (Sungkyunkwan University) ;
- Yi, Jun-Sin (Sungkyunkwan University)
- 발행 : 2010.06.16
초록
Using TFTs crystallized by MICC and ELA, electron mobility and threshold voltage were measured according to various substrate temperature from