Bipolar Resistance Switching Characteristics of $NiO_{1+x}$ films with Adding Higher-Valence Impurities

The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/$NiO_{1+x}$/TiN MIM stacks and physical properties were investigated. $NiO_{1+x}$ films with 14% W deposited at 20% oxygen partial pressure exhibited the bipolar resistance switching characteristics in Pt/$NiO_{1+x}$/TiN MIM stacks, while $NiO_{1+x}$ films with 8.2% W show unipolar resistance switching behavior. The relationship of W-doping and the crystallinity was studied by X-ray diffraction. The metallic Ni contents and $WO_x$ binding states with W amount was investigated by XPS. Our result showed that the metallic Ni, $WO_x$ binding states, and crystallinity in $NiO_{1+x}$ played an important role on the bipolar resistive switching.