한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Trench Gate 구조를 가진 Power MOSFET의 Etch 공정 온 저항 특성

Rds(on) Properties of Power MOSFET of Trench Gate in Etch Process

  • Kim, Gwon-Je (Dept. of Nano Engineering, Dong-A University) ;
  • Yang, Chang-Heon (Dept. of Nano Engineering, Dong-A University) ;
  • Kwon, Young-Soo (Dept. of Electrical Engineering, Dong-A University) ;
  • Shin, Hoon-Kyu (National Center for Nanomaterials Technology(NCNT), Pohang University of Science and Technology)
  • 발행 : 2010.06.16
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초록

In this paper, an investigation of the benefits of gate oxide for 8" the manufacturing of Trench MOSFETs and its impact on device performance is presented. Layout dimensions of trench power MOSFETs have been continuously reduced in order to decrease the specific on-resistance, maintaining equal vertical dimensions. We discuss experimental results for devices with a pitch size down fabricated with an unconventional gate trench topology and a simplified manufacturing scheme. The fabricated Trench MOSFETs are observed the trench gate oxidation by SEM.

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