Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2011.08a
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- Pages.222-222
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- 2011
In Situ X-ray Photoemission Spectroscopy Study of Atomic Layer Deposition of $TiO_2$ on Silicon Substrate
- Lee, Seung-Youb (BK21 Physics Research Division and Department of Energy Science, Sungkyunkwan University) ;
- Jeon, Cheol-ho (BK21 Physics Research Division and Department of Energy Science, Sungkyunkwan University) ;
- Kim, Yoo-Seok (BK21 Physics Research Division and Department of Energy Science, Sungkyunkwan University) ;
- Kim, Seok-Hwan (Device Materials Research Center, Korea Research Institute of Chemical Technology) ;
- An, Ki-Seok (Device Materials Research Center, Korea Research Institute of Chemical Technology) ;
- Park, Chong-Yun (BK21 Physics Research Division and Department of Energy Science, Sungkyunkwan University)
- Published : 2011.08.17
Abstract
Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100