Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)

The Korean Vacuum Society (한국진공학회)
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Investigating InSnZnO as an Active Layer for Non-volatile Memory Devices and Increasing Memory Window by Utilizing Silicon-rich SiOx for Charge Storage Layer

  • Park, Heejun (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Nguyen, Cam Phu Thi (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Raja, Jayapal (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Jang, Kyungsoo (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Jung, Junhee (Department of Energy Science, Sungkyunkwan University) ;
  • Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University)
  • Published : 2016.02.17
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Abstract

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

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