대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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ITO투명도전막의 전기, 광학적 특성 및 그 응용

The Application and Electrical, Optical Properties of $In_2O_3$: Sn Transparent Conducting Films

  • 이동훈 (경북대학교 전자공학과) ;
  • 박기철 (경북대학교 전자공학과) ;
  • 박창배 (경북대학교 전자공학과) ;
  • 김기완 (경북대학교 전자공학과)
  • Lee, Dong Hoon (Dept. of Electronics. Eng., KNU) ;
  • Park, Ki Cheol (Dept. of Electronics. Eng., KNU) ;
  • Park, Chang Bae (Dept. of Electronics. Eng., KNU) ;
  • Kim, Ki Wan (Dept. of Electronics. Eng., KNU)
  • 발행 : 1986.04.01
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초록

In2O3: Sn(ITO) transparent conducting films were fabricated by the electron beam evaporation method. The dependence of their electrical and optical properties on deposition conditions were examined. The optimum evaporation conditions were such that the deposition rate was 5-10\ulcornersec, oxygen partial pressure was 4x10**_4 torr, substate temperatudre was above 300\ulcorner, and SnO2 doping rate was 10 mol%. The values of sheet resistance and transmittance of the films in visible region fabricated under these optimum conditins were 12\ulcorner/ and 87-99%, respecively. And the energy conversion efficiency of the SIS solar cell fabricated using ITO was 9.16%. It is shown that the transparent conducting films can be applied to the TV camear pick-up tube and solar cell.

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