대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

도우핑된 비정질 실리콘의 온도에 따른 광학적 특성

Temperature Effects on the Optical Properties of Doped Amorphous Silicon

  • 박진석 (서울대학교 전기공학과) ;
  • 한민구 (서울대학교 전기공학과) ;
  • 이정한 (서울대학교 전자공학과)
  • Park, Jin Seok (Dept. of Electrical Eng., Seoul National Univ.) ;
  • Han, Min-Koo (Dept. of Electrical Eng., Seoul National Univ.) ;
  • Lee, Chung Han (Dept. of Elec. Eng., Seoul National Univ.)
  • 발행 : 1986.04.01
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초록

Experimental results are reported concerning temperture effects from room temperature to 100\ulcorner on the optical properties of N-and P-type hydrogenated amorphous silicon films prepared by RF glow discharege. Optical absorption coefficient and optical bandgap have been measured and analyzed as a function of temperature. Optical absorption coefficient increase monotonically with temperature, while the optical bandgape of doped amorphous silicons decrease linearly by about 4-7x10**-4 [ev/k].

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