대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

수직 이중 확산형 MOSFET

A Vertical Double-Diffused MOSFET

  • 김종오 (아주대학교 전자공학과) ;
  • 최연익 (아주대학교 전자공학과) ;
  • 손호태 (단국대학교 전기공학과) ;
  • 성만영 (단국대학교 전기공학과)
  • Kim, Jong-Oh (Dept. of Elec. Eng., Ajou Univ.) ;
  • Choi, Yearn-Ik (Dept. of Elec. Eng., Ajou Univ.) ;
  • Sohn, Ho-Tae (Dept. of Elec. Eng., Dankuk Univ.) ;
  • Sung, Man-Young (Dept. of Elec. Eng., Dankuk Univ.)
  • 발행 : 1986.06.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In this paper, we discuss fabrication and characteristics of the Vertical Double diffused MOS(VDMOS) transistor. The epi layers of starting wafers are 18~22\ulcorner in thickness and 8~12\ulcornercm in resistivity. The channel regions are defined through the self-aligned double diffusion process. The characteristics of the fabricated VDMOS are breakdown voltage of 240V, threshold voltage of 2V, on-resistance of 226\ulcornerand transconductance of 3x10**-3 mho.

키워드