Temperature Control and Wafer Temperature Distribution Simulation in RTA System

RTA 시스템에서의 온도제어와 웨이퍼상의 온도분포 Simulation

  • 조병진 (한국과학기술원 전기 및 전자공학과) ;
  • 김경태 (한국과학기술원 전기 및 전자공학과) ;
  • 김충기 (한국과학기술원 전기 및 전자공학과)
  • Published : 1988.06.01

Abstract

A rapid thermal annealing system using tungsten halogen lamp has been designed and assembled. A control scheme where the temperature control is executed with calculated wafer temperature by considering the thermocouple delay rather than measured thermocouple temperature,is proposed. This control scheme gives more accurate control of the wafer temperature. In addition, the distribution of transmitted light power to the wafer in the system has been simulated, and lamp interval modification has been able to give more uniform light power distribution. Considering incident light spectrum, absorption, reflection, radiation of silicon, etc., temperature profile has been simulated. When the light power uniformity on the 3" wafer is below 1%, the temperature uniformity is about 2%.

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