Characteristics of Alumina Film Prepared by MOCVD

MOCVD법으로 제조된 알루미나 박막의 특성

  • 최두진 (한국과학기술연구원 무기재료연구실) ;
  • 임공진 (연세대학교 요업공학과) ;
  • 정형진 (한국과학기술연구원 무기재료연구실) ;
  • 송한상 (연세대학교 요업공학과) ;
  • 김창은 (연세대학교 요업공학과)
  • Published : 1990.06.01

Abstract

Al2O3 film was chemically deposited by pyrolytic decom,positio of the Al-tri-isopropoxide/N2 system at 350$^{\circ}C$, 30 and 1.86torr. FTIR analysis showed a deposited film was a hydrated alumina and transformed to an anhydrous one after heat treatment(1hr, >800$^{\circ}C$ or 4hr, >500$^{\circ}C$) in N2 atmosphere. This transformation influenced on the CV-hysteresis of Si-Al2O3 structure. Also, a pH sensitivity of EIS(Electrolyte-Insulator-Semiconductor)structure using Si-Al2O3/SiO2 film was 50mV/pH in the range of pH 3 to 7.

Keywords

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