Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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InP JFET Devices for High Speed Switching Application

광대역 교환을 위한 InP JFET소자

  • 지윤규 (한국과학기술원 전기 및 전자공학과) ;
  • 김성준 (서울대학교 전자공학과 및 반도체연구소) ;
  • 정종민 (한국과학기술원 전기 및 전자공학과)
  • Published : 1991.05.01
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Abstract

A high performance fully ion-implanted InP JFET was characterized for high speed switching elements. The switch has an insertion loss of 5.5dB with 31.6dB isolation at 1GHz. This device can effectively swithc a byte-multiplexed 2Gb/s signal and an eye-diagram taken at 2Gb/s shows an error-free eye pattern. Therefore, this device can be used as a switching element for high transmission data rate for monolithic integration of optoelectronic circuit in the long-wavelength region.

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