Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Characteristic of Transistor Using Ti-SALICIDE Process and Its Application to Oscillator I,C(I)

티타늄 살리사이드 공정을 이용한 트랜지스터의 특성 및 오실레이터 I.C에의 적용(I)

  • 이상흥 (충남대학교 전자공학과) ;
  • 구경완 (충청전문대학 전자공학과) ;
  • 홍봉식 (충남대학교 전자공학과)
  • Published : 1991.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper describes the improvement of frequency characteristic of crystal oscillator I.C using Ti-Salicide. The characteristics of transistor(drive current) using Ti-Salicide process are better than Poly-Si process, because the mobility. To know frequency characteristic of oscillator I.C, the simulation is performed using inverter buffer chain of Fan-out 10 TTL. Its result shows at once the generation of normal clock pulse in input signal and the improvement of rising and falling time.

Keywords