Degradation Characteristics of Hot-Electron-Induced p-MOSFET's GateOxide Thickness Variations by Stress

스트레스에 의한 핫-전자가 유기된 p-MOSFET의 게이트 산화막 두께 변화의 열화의 특성 분석

Characteristics of hot-electron-induced degradation by AC, DC was investigated for p-MOSFET's(W/L=25/l$\mu$m) with sub-10nm RTP-CVD gate oxides. It was confirmed that the surface channel p-MOSFET of a thinner gate oxide shows less degradation. Mechanisms for this effect were analyzed using a simple MOS Device degradation model. It was found that the number of generated electron traps(fixed charge) is determined by the amount of peak gate current, dependent of the gate oxide thickness, and the major cause of the smaller degradation in the thinner gate oxide devices is the lower hot electron trapping carriers.