적외선 레이저의 간섭현상을 이용한 실리콘 웨이퍼의 온도 측정

Monitoring of Silicon Wafer Temperature by IR Laser Interfermetry

We used IR laser inteferometric technique for measuring the temperature of wafer during cryogenic ECR etching. Using this technique, the effect of RF bias power and microwave power on the wafer temperature during etching period is investigated. As the RF bias power and microwave power was increased, the temperature of the wafer considerably increased and we concluded that to prevent the increase of substrate temperature during etching period, an adequate wafer cooling is needed.