Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 31A Issue 10
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- Pages.114-118
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- 1994
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- 1016-135X(pISSN)
Experimental verification of steady-state nyquist theorem in MOSFETs
MOSFET에서 Steady-State Nyquist 정리의 실험적 검증
Abstract
To resolve thd discrepancy between the existing channel thermal noise theory of MOSFETs and a new theory called the stady-state Nyquist theorem, we have measured the channel thermal noise of specially designed MOSFETs with both uniform and nonuniform channels. the experimental results clearly show that the correct theory of the channel thermal nois in MOSFETs should be the steady-state Nyquist theorem.
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