전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제32A권1호
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- Pages.129-137
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- 1995
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- 1016-135X(pISSN)
AlgaAs/GaAs SABM HBT의 제작 및 특성
Fabrication and characteristics of AlGaAs/GaAs SABM HBTs
초록
AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm
키워드