Investigation of the existing thermal noise theories for field-effect transistors using the monte-carlo method and the generalized ramo-shockley theorem

Monte-carlo 방법과 일반화된 ramo-shockley 정리를 통한 FET 열잡음 이론의 검증

Monte carlo method is especially a useful method for the analysis of thermal noise of semiconductor devices since the time dependence of microscopic details is simulated directly. Recently, a mthod for the calculation of the instantaneous currents of 2-dimensional devices, which is numerically more accurate than the conventional method, has been proposed using the generalized ramo-shockley theorem. Using this mehtod we investage the validity of the existing thermal noise theories of field-effect transistors. First, the 1-dimensional analysis of thermal noise theories of field-effect transistors. First, the 1-dimensional analysis of thermal noise theories of field-effect transistors. First, the 1-dimensional analysis of thermal noise using ramo-shockley theorem is shown to be applicable to 2 dimensional devices if the frequency of interest is low enough. The correlation between electrons in different regions of th echannel is shown not to be negligible. And we also obtian the spatial map of the noise in the channel region. By doing so, we show that the steady state nyquist theorem is the correct theory rather than the theory by van der ziel et.al.