Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 10
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- Pages.130-138
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- 1996
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- 1016-135X(pISSN)
Hot-carrier effects in sub-micron scaled buried-channel P-MOSFETs
Sub-micron 규모의 메몰 채널(buried-channel)P-MOSFETs에서의 핫-캐리어 현상
Abstract
The size of a device needs to scale down to increase its integrity and speed. As the size of the device is reduced, the hot-carrier degradation that severely effects on device reliabilty is concerned. In this paper, sub-micron buried-channel P-MOSFETs were fabircated, and the hot-carrier effects were invetigated. Also the hot-carrier effect in the buired-channel P-MOSFETs and the surface-channel P-MOSFETs were compared with simulation programs using SUPREM-4 and MINIMOS-4. This paper showed that the electric characteristics of sub-micron P-MOSFET are different from those of N-MOSFET. Also it showed that the punchthrough voltage (
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