- Volume 33A Issue 12
In this paper, a simple fabrication technique of an air-bridge for interconnection of isolated electrodes of microwave active and passive devices and MMIC's is proposed. The proposed air-bridge proceses are mainly combinations of thermal evaporation, positive photoresist and image reversal processes for easy lift-off of up to 2.0 .mu.m thick metal. According to the resutls of air-birdge processes, it is confirmed that air-gap and thickness of theair-bridge are about 3.5.mu.m, and 2.0.mu.m, respectively. And it is also possible to make the fine air-bridge with widths of 5~60.mu.m and post-intervals of 25~200.mu.m withot collapse. finally, GaAs power MESFET's and rectangular spiral inductors are fabricatd and measured in order to confirm of feasibility of the proposed air-bridge processes. The MAG of the fabricated power MESFET's is 10dB at 10GHz, and the inductance of the (200.mu. * 6 turns) rectangular spiral inductors 4.5 nH inX-band.