Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 12
- /
- Pages.77-82
- /
- 1996
- /
- 1016-135X(pISSN)
Breakdown characteristics of gate oxide with tungsten polycide electrode
텅스텐 폴리사이드 전극에 따른 게이트 산화막의 내압 특성
Abstract
The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry
Keywords