E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제9권1호
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- Pages.9-17
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- 1996
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
$N_2O$ 가스를 사용하여 PECVD로 성장된 Oxynitride막의 특성
Characteristics of oxynitride films grown by PECVD using $N_2O$ gas
초록
Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N