Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

The annealing effects of Au/Te/Au n-GaAs structure

Au/Te/Au/ n-GaAs구조의 열처리 효과

  • 정성훈 (광운대학교 전자재료공학과 신기술연구소) ;
  • 송복식 (광운대학교 전자재료공학과 신기술연구소) ;
  • 문동찬 (광운대학교 전자재료공학과 신기술연구소) ;
  • 김선태 (대전산업대학교)
  • Published : 1996.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

Keywords