Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Preparation and Electrical Properties of the Ferroelectric $Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ Thin Films by Sputtering Method

스퍼터링법에 의한 강유전성 $Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ 박막의 제조 및 전기적 특성에 관한 연구

  • 장영일 (고려대학교 재료공학과) ;
  • 김장엽 (고려대학교 재료공학과) ;
  • 임대순 (고려대학교 재료공학과) ;
  • 김병호 (고려대학교 재료공학과)
  • Published : 1998.03.01
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Abstract

$Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ films have been synthesized on Pt/Ti/$SiO_2$/Si substrates using rfmagnetron sputtering Concentration of Fe and Nb in the deposited films was adjusted to near stoichiometry through the control of target composition, Films deposited with adjusted to near stoichiometry showed better electrical properties such as dielectic and leakage characteristics. Crystallinity and dielectric constant increased with increasing excess PbO upto 9 mol% This study also showed that dielectric constant and leakage current characteristics improved by optimum content of $O_2$ flow during deposition.

Keywords

References

  1. J. Appl. Phys. v.40 no.6 Some Thin-Film Properties of a New Ferroelectric Composition D.W. Chapman
  2. Scien. v.246 Ferroelectric Memories J.F. Scott;C.A. Paz de Araujo
  3. Am. Ceram. Soc. Bull. v.66 no.4 Preparation of Lead-Based Ferroelectric Relaxors for Capacitors T.R. Shrout;A. Halliyal
  4. Scien. v.247 Ceramic Thin Films:Fabrication and Applications M. Sayer;K. Sreenivas
  5. Ceram. Bull. v.71 no.1 Advances in Processing of Ferroelectric Thin Films L.M. Sheppard
  6. IEEE Trans. Electron Devices v.37 no.8 Thickness Limitations of SiO₂Gate Dielectrics for MOS ULSI P.J. Wright;K.C. Saraswat
  7. Ceram. Bull. v.73 no.8 PZN-Based Relaxors for MLCCs Y. Yamasida
  8. Ceram. Bull. v.63 no.6 Dielectric Properties in the Pb(Fe½Nb½)O₃-Pb(Ni⅓Nb⅔)O₃Solid-Solution System T.R. Shrout;S.L. Swortz;M.J. Haun
  9. J. Mater. Sci. v.23 Fabrication of Perovskite Pb(Fe⅔W⅓)x(Fe⅓)$_{0.9-x}Ti_{0.1}$O₃by Double Calcination Process G.F. Chen;S.L. fu
  10. J. Am. Ceram. Soc. v.74 no.1 Moten Salt Synthesis of a Complex Pervskite, Pb$Fe_{0.5}Nb_{0.5}$O₃ C.C. Chiu;C.C. Li;S.B. Desu
  11. Jpn. J. appl. Phys. v.32 no.3A Electrical and Electromechanical Properties of Hot-Pressed Pb(Fe½Nb½)O₃Ferroelectric Ceramics M. Yokosuka
  12. Jpn. J. Appl. Phys. v.33 no.9B Dielectric Properties of Pb(Fe½Nb½)O₃-Based Ceramics N. Ichinose;N. Kato
  13. J. Am. Ceram. Soc. v.74 no.11 Study of the Order-Disorder Transition in A(B'B")O₃Perovskite Type Ceramics X. Zhang;Q. Wang
  14. J. Kor. Ceram. Soc. v.31 no.6 Effects of Deposition Parameters on MgO Thin Films on Si(100) Substrates by Reactive RF magnetron Sputtering Y.J. Lee;S. Baik
  15. Appl. Phys. Lett. v.58 no.11 Lead Zirconate Titanate Films by Rapid Thermal Processing C.V.R.V. Kumar;M. Sayer;R. Pascual;D.T. Amm;Z. Wu
  16. J. Mater. Sci. v.7 Formation and Characterisitics of lead Lanthanum Zirconium Titanate Thin Films Formed by Using the r.f. Sputtering Methods Y.S. Hwang;S.H. Paek;J.H. Lee;C.S. Park;J.S. Choi;J.K. Jung;Y.N. Kim
  17. J. Kor. Ceram. Soc. v.31 no.8 An Effect of O₂/Ar Ratio on the Characteristics of RF Magnetron Sputtered BaTiO₃Thin Film J.M. Ahn;D.K. Choi;Y.H. Kim
  18. J. Vac. Sci. Tech. v.A10 no.4 Effects of Post-deposition Annealing Ambient on the Electrical Characterisitics and phase Transformation Kinetics of Sputtered Lead Zirconate Titanate(65/35) Thin Film Capacitors V. Chikarmance;C. Sudhama;J. Kim;J. Lee;A. Tasch