참고문헌
- IEDM Tech. Dig. 21 psec Switching 0.1㎛-CMOS at Room Tempertaure Using High Performance Co-salicide Process T. Yamazaki;K. Goto;T. Fukano;Y. Nara;T. Sugi;T. Ito
- 1995 Symposium on VLSI Technology High Performance Sub-Tenth Micron CMOS Using Advandced Boron Doping and WSi2 Dual Gate Process T. Takeuch;T. Yamamoto;A. Furukawa;T. Tamura;K. Yoshida
- J. Electrochem. Soc. v.131 Interaction between Ti and SiO₂ C. Y.Ting;M. Wittmer;S. S.Iyer;S. B. Brodsky
- IEICE Trans. Electron. v.E77 no.3 Ti Salicide Process for Subquarter-Micron CMOS Devices K. Goto;T. Yamazaki;Y. Nara;T. Fukano;T. Sugii;Y. Arimoto;T. Ito
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VMIC 1993
Thermal Instability of Thin
$TiSi_2$ -Effect on Materials Properties and MOS Device Characteristics G. E. Georgiou;F. A. Baiocchi;S. A. Eshraghi;N. T. Ha;R Key;S. nakahara;M. R. Baker - J. Appl. Phys. v.57 Metastable Phase Formation in Titanium-Silicon Thin Films R. Beyers;R. Sinclair
- J. Mater. Res. v.10 A Comparison of C54-TiSi₂Formation in Blanket and Submicron Gate Structure Using In-situ X-ray Diffraction During Rapid Thermal Annealing L. A Clevenger;R. A. Roy;C. Cabral Jr.;K. L. Saenger;S. Brauer;G Morales;K. F. Ludwig, Jr.;G. Gifford;J. Buccignano;J. Jordan-Sweet;P. Deharen;G. V. Stephenson
- Constitution of Binary Alloys(first suppl.) R. P. Elliot
- Constitution of Binary Alloys(second suppl.) F. A. Shunk
- J. Appl. Phys. v.72 Effect of Sb on Phase Transformation of Amorphous TiSi₂Thin Film X.-H.Li;J. R. Carlsson;S. F. Gong;H. T. G. Hentzell
- J. Vac. Sci. Technol. v.A2 Effect of Ion Implanatation Doping on thd Formation of TiSi₂ H.K.Park;J. Sachitano;M. Mepherson;T. Yamaguchi;G. Lehman
- 1996 Symposium on VLSI Technology. Digest of Technical Paper A Ti Salicide Process For 0.10㎛ Gate Length CMOS Technology J. A. Kittl;Q. -Z. Hong;M. Rodder;D. A. Prinslow;G. R. Misium
- J. Appl. Phys. v.67 A Comparison of the Reaction of Titanium with Amorphous and Monocrystalline Silicon Ivo J. M. M.Raaijmakers;Ki-Bum Kim
- Phys. Review B. v.49 Kinetic Mechanisms of the C49-to-C54 Polymorphic Transformation in Titanium Disilicide Thin Film : A Microstructure-Scaled Nucleation-Mode Transition Z. Ma;L. H. Allen