Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Oprical Properties of $\alpha$-Sulfur Single Crystal

$\alpha$-sulfur 단결정의 광학적 특성에 관한 연구

  • 송호준 (기초과학지원연구소 광주분소) ;
  • 김화택 (기초과학지원연구소 광주분소) ;
  • 이정순 (기초과학지원연구소 대전분소)
  • Published : 1998.06.01
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Abstract

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

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References

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