• 대한전기학회논문지
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• 제35권1호
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• pp.1-7
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• 1986

The GaAs bulk single crystals are grown by the Horizontal Bridgman method. During the growth, one of the problems in Bridgman method is the boat wetting between GaAs molten and silica boat. This boat wetting may result in another nucleation to form twin crystals. In this study, We find that the optimal size for sand blasting is 320 mesh. Backfilling the ampoule with argon gas during the vaccum bake-out decreaes the boat wetting. The reaction mechanism of Ga with quartz to produce suboxide, Ga2O, and sillion is discussed.

• 한국결정학회지
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• 제7권1호
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• pp.64-72
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• 1996

증기압 제어를 위한 저온부를 없애고, 고온부의 단일 온도영역만으로 GaAs 단결정을 성장 시키는 단일 온도대역 수평 Bridgman(1-T HB: single temperature zone horizontal Bridgman)방식에서는 증기압에 상응할만한 반응관 내부의 압력을 As 초과 유입량의 기화에 의하여 유지해야 하므로 그 양을 정밀하게 결정해 주어야 한다. 이것을 위하여, 우선적으로 Ga-As 계에서의 열화학적 특성을 규명하였고, 이에 근거하여 단일 온도대역 수평 Bridgman 법으로 결정성장할 때의 As 초과 유입량을 GaAs 장입량, 반응관 칫수, 온도구배 등에 의한 일반해로 유도하였다. 따라서 단일 온도대역 수평 Bridgman 법에 의한 GaAs 단결정 성장의 이론적 근거를 마련하였다.

• 한국결정성장학회지
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• 제16권1호
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• pp.1-7
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• 2006

Some lead-based crystals show excellent ferroelectric, piezoelectric or scintillation properties and have attracted much attention in recent years. However, the erosion of the high temperature solution on platinum crucible and the evaporation of PbO component are the main problems often encountered during the crystal growth. In this paper, we reported recent progress on the Bridgman growth of lead-based functional crystals, such as novel relaxor ferroelectric crystals (PZNT and PMNT), scintillation crystals $(PbWO_4,\;PbF_2\;and\;PbClF)$ and piezoelectric crystals $(Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}),$ in Shanghai Institute of Ceramics, Chinese Academy of Sciences. The vertical Bridgman method has been modified to grow PZNT crystals from high temperature solution and as-grown crystals have been characterized. Large size lead-based scintillators, $PbWO_4\;and\;PbF_2$ crystals, have been mass-produced by the vertical Bridgman method in the multi-crucible fumace. These crystals have been supplied to CERN and other laboratories for high-energy physics experiments. The Bridgman growth of piezoelectric crystals $Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}$ are discussed also.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.58.2-58.2
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• 2007

• 대한방사선방어학회:학술대회논문집
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• 대한방사선방어학회 2011년도 추계 학술발표회 및 심포지엄
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• pp.218-219
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• 2011

• 한국결정학회지
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• 제7권1호
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• pp.81-87
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• 1996

석영 boat를 반응용기로 쓰는 수평 Bridgman 법에서, GaAs 단결정에 유입되는 Si 농도를 Ga-As 계의 상평형에 근거한 열역학적 평형을 가정하여 성장방법 별로 계산하였고, Hall 측정에 의한 전자 농도 측정치와 비교하였다. 단일 온도대역 수평 Bridgman(1-T HB) 법의 경우 Si 농도의 계산치가 5.3 ×10 15(atoms/cm3)인데 비해 실험치는 9.8 ×10 15(/cm3) 이었고, 이중 온도대역 수평 Bridgman(2-T HB) 법에서는 계산치가 1.1 ×10 16(atoms/cm3), 측정치가 1.5 ×10 16(/cm3) 인 것으로 각각 나타났다. 한편 1-T나 2-T HB 법에 비하여 성장시간이 절반 정도인 VGF(vertical gradient freeze) 방법의 경우 이론치와 실험치가 비교적 일치 하였고 그 값은 (6∼8) ×10 15 (atoms/cm3)인 것으로 나타났다.

• 전기학회논문지P
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• 제58권4호
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• pp.451-454
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• 2009

The $\beta-In_2Te_3$ single crystal was grown by vertical Bridgman method. The $\beta-In_2Te_3$ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be $a\;=\;0.617\;{\AA}$. The direct optical energy gap ($E_g$) was found to be 1.11 ev at 300 K. Raman spectra peak of $\beta-In_2Te_3$ single crystal showed the low $E_{LO}$ mode at $105\;cm^{-1}$. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be $1.8\;{\times}\;10^{-2}\;{\Omega}^{-1}cm^{-1}$ at 300 K. The activation energy was found to be 0.51 eV.

• 한국결정성장학회지
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• 제25권6호
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• pp.231-238
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• 2015

사파이어 단결정은 GaN계 화합물 증착이 용이하여 고휘도 LED(Light Emitting Diode), 고출력 레이저 산업 등에서 크게 각광받고 있다. 다양한 사파이어 단결정 제조공법 중 vertical Bridgman 공법은 고품질의 사파이어를 c-축 방향으로 성장시킬 수 있는 공법이며 상업적으로 적용이 검토되고 있다. 본 연구에서는 2인치 사파이어 성장 vertical Bridgman 공정에서 성장시 온도구배에 의해 발생하는 열응력을 유한요소 모델을 통해 분석하였다. 이를 통해 성장시 수직, 수평방향으로의 온도구배가 사파이어 결정의 열응력과 결함발생에 미치는 영향을 검토하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.481-484
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.