Effects of Top Electrode Thickness on Ferroelectric Properties of Preferentially Oriented $Pb(Zr, Ti)O_3$Thin Films

상부전극 두께가 우선방위를 갖는 $Pb(Zr, Ti)O_3$ 박막의 강유전체 특성에 미치는 영향

  • 고가연 (조선대학교 재료공학과(수송기계부품 공장자동화 연구센터)) ;
  • 이은구 (조선대학교 재료공학과(수송기계부품 공장자동화 연구센터)) ;
  • 이종국 (조선대학교 재료공학과(수송기계부품 공장자동화 연구센터)) ;
  • 박진성 (조선대학교 재료공학과(수송기계부품 공장자동화 연구센터) ;
  • 김선재 (한국원자력연구소 원자력재료기술개발팀)
  • Published : 1999.10.01

Abstract

Ferroelectric properties and reliability characteristics of(111) and (100) preferentially oriented tetragonal Pb(Zr0.2Ti0.8)O3 (PZT) thin film capacitors have been investigated as a function of the top electrode thickness. The (111) preferentially oriented film exhibits 180$^{\circ}$domain switching process with better squareness of hysterisis loop and abrupt change of small singal capacitance-voltage comparing to the (100) preferentially oriented film having 90$^{\circ}$ domain switching process. The domain swithcing process of tetragonal phase PZT is different from that of rhobohedral phase. The film with thinner top electrode shows less initial switching polarization due to less compressive stress but it exhibits better endurance characteristics due to enhancing partial switching region.

Keywords

References

  1. Science v.246 Ferroelectric Memories J. F. Scott;C. A. Araujo
  2. Semicond. Sci. Technol. v.10 Ferroelectric Thin Film Technology for Semiconductor Memory R. Moazzami
  3. Jpn. J. Appl. Phys. v.33 Dielectric Properties of (111) and (100) Lead-Zirconate-Titanate Films Prepared by Sol-gel Technique K. Aoli;Y. Fukuda;K. Numata;A. Nishimura
  4. Appl. Phys. Lett. v.67 Electrical Properties Maxima in Thin Films of the Lead Zirconate-Lead Titanate Solid Solution System H D. Chen;K. R. Udayakumar;C. J. Gaskey;L. E. Cross
  5. Thin Solid Films v.272 Dopant Compensation Mechanism and Leakage Current in$Pb(Zr_0.52Ti_0.48)O_3$Thin Films C. K. Barlingay;S. K. Dey
  6. J. Mater. Res. v.7 Formation Kinetics of$PbZr_xTi_{1-x}O_3$Thin Films C. K. Kwok;S. B. Desu
  7. Jpn. J. Appl. Phys. v.33 Preparation and Characterization of Sol-gel Derived Epitaxial and Oriented$Pb(Zr_0.52Ti_0.48)O_3$Thin Films K. Nashimoto;S. Nakamura
  8. Integrated Ferroelectrics v.2 Improved Switching Endurance of Lead Zirconate-Titanate Capacitors for Nonvolatile Memory Applications I. K. Naik;L. E. Sanchez;S. Y. Wu;B. P. Maderie
  9. Integrated Ferroelectrics v.15 Nucleation and Orientation of Sol-gel PZT Films on Pt Electrode G. J. Willem;D. J. Wouters;H. E. Maes;R. Nouwen
  10. J. Appl. Phys. v.70 Quantitative Measurement of Spacecharge Effects in Lead Zirconate-Titanate Memories J. F. Scott;C. A. Araujo;B. M. Melnick;L. D. McMillan;R. Zuleeg
  11. J. Appl. Phys. v.70 Preparation and Ferroelectric Properties of$Pb(Zr_0.53Ti_0.47)O_3$Thin Films by Spin Coating and Metalorganic Decomposition G A. C. M. Spierings;M. J E Ulenaers;G. L. M. Kampschoer;H. A. M. van Hal;P K. Larsen
  12. Jpn. J. Appl. Phys. v.34 Depolarization Characteristies in Sol-gel Ferroelectric$Pb(Zr_0.4Ti_0.6)O_3$Thin Film Capacitors T. Mihara;H. Yoshimoti;H. Watanabe;C. A. Araujo
  13. J. Appl. Phys. v.78 Stress in Pt/Pb(Zr.Ti)O₃/Pt Thin-film Stacks for Integrated Ferroelectric Capacitors G. A. C. M Spierings;G J M Dormans;W. G. J. Moors;M J E. Ulenaers;P K. Larsen
  14. J. Electrochem Soc. v.140 Electrode for$Pb(ZrxTi_{1-x})O_3$Ferroelectric Thin Films D. P. Vijay;S. B. Desu
  15. J. Appl. Phys. v.76 Ferroelectric Properties and Fatigue of$Pb(Zr_0.51Ti_0.49)O_3$Thin Films of Varying Thickness: Blocking Layer Model P. K. Larsen;G. J. M. Dormans;D. J. Taylor;P. J. van Veldhoven