Application of Inverse Pole Figure to Rietveld Refinement: III. Rietveld Refinement of $SnO_2$ Thin Film using X-ray Diffraction Data

  • Kim, Yong-Il (Korea Research Institute of Standards and Science, P.O. Box 102) ;
  • Jung, Maeng-Joon (Department of Chemical Engineering, Sangju National University) ;
  • Kim, Kwang-Ho (Department of Inorganic Materials Engineering, Pusan National University)
  • Published : 2000.12.01

Abstract

The SnO$_2$film was deposited on a corning glass 1737 substrate by plasma enhanced chemical vapor deposition using a gas mixture of SnCl$_4$, $O_2$, and Ar. The film thickness was measured using $\alpha$-step and was about 9400$\AA$. The conventional X-ray diffractometry and pole figure attachment were used to refine the crystal structure of SnO$_2$ thin film. Six pole figures, (200), (211), (310), (301), (321), and (411), were measured with CoK$_\alpha$ radiation in reflection geometry. The X-ray diffraction data were measured at room temperature using CuK$_\alpha$ radiation with graphite monochromator. The agreement between calculated and observed patterns for the normal direction of SnO$_2$ thin film was not satisfactory due to the severely preferred orientation effect. The Rietveld refinement of heavily textured SnO$_2$ thin film was successfully achieved by adopting the pole density distribution of each reflection obtained from the inverse pole figure as a correction factor for the preferred orientation effect. The R-weighted pattern, R$_wp$, was 15.30%.

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