The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
권호 표지

Ferroelectric Properties and Comparison between $PZT/IrO_2$ and PZT/Ir

  • Jeon, Min-Seok (Department of Inorganic Materials Engineering, Hanyang University) ;
  • Lee, Hee-Soo (Material Analysis Team, Korea Testing Laboratory, Division of KITECH) ;
  • Kim, Il-Doo (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Park, Duck-Kyun (Department of Inorganic Materials Engineering, Hanyang University)
  • Published : 2000.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

Reactively sputtered $Pb(Zr,Ti)O_3$(PZT) films on $IrO_2$and Ir were evaluated with particular consideration on interface properties. The $IrO_2$and Ir were previously annealed at $650^{\circ}C$ in $O_2$or $N_2$atmosphere, respectively. There was no appreciable roughening in the interface of the $PZT/IrO_2$respective to that of the PZT/Ir; the rms roughness of $IrO_2$and Ir was about 3nm and 10nm, respectively. The ferroelectric properties of the $PZT/IrO_2$were found to be better than that of the PZT/Ir; however, the leakage current of the $PZT/IrO_2$was slightly larger than that of the PZT/Ir. The $PZT/IrO_2$thin films did not exhibit any fatigue up to $10^{11}$ cycles; the $P^*\;_r-P^r$ value decreased only from 16.6 to 14$\mu$C/$\textrm{cm}^2$ until $10^{12}$ polarization reversals. On the other hand, although thin $IrO_2$layer was formed between PZT and Ir, the PZT/Ir thin films began to undergo fatigue after $10^9$ polarization reversals.

Keywords

References

  1. J. Appl. Phys. v.69 no.8 Crystrallization of Sol-Gel Derived Lead Zirconate Titanate Thin Films S.S. Dana;K.F. Etzold;J. Clabes
  2. J. Vac. Sci. Technol. v.10 no.4 Integration of Ferroelectric Thin Films into Nonvolatile Memories S. Sinharoy;H. Buhay;D.R. Lampe;M.H. Rrancombe
  3. J. Mater. Res. v.9 no.11 Comtribution of Electrodes and Microstructures to the Ekectrical Properties of Pb(Zr, Ti)O₃Thin Film Capacitors H.N. Al-Shareef;A.I. Kingon;X. Chen;K.R. Bellur;O. Auciello
  4. Thin Solid Films v.263 Fatigue of Organometallic Chemical Vapor Deposited Pb(Zr, Ti)O₃thin films with Ru/RuO₂and Pt/Pt Electrodes D.J. Taylor;J. Geerse;P.K. Larsen
  5. Jpn. J. Appl. Phys. v.33 no.9B Preparation and Properties of Ru ad RuO₂Thin Films Electrodes for Ferroelectric Thin Films H. Maiwa;N. Ichinose;K. Okazaki
  6. J. Electrochem. Soc. v.140 no.9 Electrodes for Pb(Zr, Ti)O₃Ferroelectric Thin Films D.P. Vijay;S.B. Desu
  7. Appl. Phys. Lett. v.64 no.20 Polycrystalline LaSrCo₃/Pb(Zr, Ti)O₃/LaSrCoO₃Ferroelectric Capacitors on Platinazed Silicon with no Polarization Fatigue R. Dat;D.J. Lichtenwalner;O. Auciello;A.I. Kingon
  8. Appl. Phys. Lett. v.63 no.18 Fabrication and Properties of Epitaxial Ferroelectric Heterostructures with (SrRuO₃) Isotropic Metallic Oxide Electrode C.B. Eom;R.B. Van Dover;J.M. Philips;D.J. Werder;J.H. Marshall;C.H. Chen;R.J. Cava;R.M. Fleming
  9. Jpn. J. Appl. Phys. v.35 no.12A SrRuO₃ Thin Films Grown under Reduced Oxygen Pressure M. Hiratani;C. Okazaki;K. Imagawa;K. Takagi
  10. Appl. Phys. Lett. v.66 no.2 Influence of Platinum Interlayers on the Electrical Properties of RuO₂/Pb(Zr, Ti)O₃/RuO₂ Capacitor Heterostructures H.N. Al-Shareef;K.B. Bellur;A.I. Kingon;O. Auciello
  11. Jpn. J. Appl. Phys. v.37 no.6A Electrical Characterization of Ferroelectric Pb(Zr, Ti)O₃Thin Films Deposited on Pt-Coated RuO₂ Electrodes M.S. Jeon;J.B. Lee;D.K. Choi
  12. Jpn. J. Appl. Phys. v.33 no.9B Preparation of Pb(Zr, Ti)O₃Thin Films on Ir and IrO₂Electrodes T. Nakamura;Y. Nakao;A. Kamisawa;H. Takasu
  13. J. Kor. Phys. Soc. v.32 Pb(Zr, Ti)O₃Thin Films Deposition on Ir and IrO₂Electrodes by MOCVD M. Shimizu;H. Fujisawa;S. Hyodo;S. Nakashima;H. Niu;H. Okino;T. Shiosaki