Extracting and Characterization of the Base Resistance based on Analysis of the Equivalent Noise Circuit for Common Collector

공통컬렉터 잡음등가회로 해석에 의한 베이스저항의 추출 및 특성

  • Gu, Hoe-U (Dept.of Electronics Engineering Chung Buk, National University) ;
  • Lee, Gi-Yeong (Dept.of Electronics Engineering Chung Buk, National University)
  • Published : 2000.02.01

Abstract

We presented a method for extracting the base resistance r/sun bb/ based on analysis of the equivalent noise circuit for common collector. Measurements were conducted on devices with poly-emitter structure fabricated by BiCMOS process. Base resistance measurements have been performed for different base currents and structure. For low base current it is shown that the experimental data agree with theoretical expectations.

공통컬렉터 잡음등가회로 해석에 기초한 베이스저항 추출방법을 제시하였다. 측정은 BiCMOS공정으로 제조되고 폴리에미터 구조를 갖는 소자에 대해서 실행 되었다. 베이스저항 측정은 서로 다른 베이스전류와 구조에 따라 수행되었다. 낮은 베이스전류에서 측정된 실험값은 이론적으로 예측된 값과 매우 잘 일치하는 결과를 얻었다

Keywords

References

  1. Kenneth R. Laker, and Willy M. C. Sansen, Design of Analog Integrated Circuits and Systems, McGraw-Hill., 1994
  2. I. E. Getreu, Modeling the Bipolar Transistor, Elsevier Scientific Publishing Company
  3. Giuseppe Massobrio, Paolo Antognetti, Semiconductor Device Modeling with SPICE, McGraw-Hill., 1997
  4. J. E. Lary and R. L. Anderson, 'Effective base resistance of bipolar transistors,' IEEE Trans. Electron Devices, vol. ED-32, pp. 302-309, 1986
  5. M. Schroter, 'Simulation and modeling of the low-frequency base resistance of bipolar transistors and its dependence on current and geometry,' IEEE Trans. Electron Devices, vol. 38, pp. 538-544, 1991 https://doi.org/10.1109/16.75164
  6. M. Schroter, 'modeling of the lowfrequency base Resistance of Single Base Contact Bipolar Transistors,' IEEE Trans. Electron Devices, vol. 39, pp. 1966-1992, 1991 https://doi.org/10.1109/16.144691
  7. T. H. Ning and D. D. Tang, 'Method for Determining the Emitter and Base Series Resistances of Bipolar Transistors,' IEEE Trans. Electron Devices, ED-31, 409. 1984
  8. P. A. H. Hart, Bipolar and Bipolar-MOS Integration, Elsevier Science B. V., 1994
  9. S. T. Hsu, 'Noise in High-Gain Transistors and Its Application to the Measurement of Certain Transistor Parameters,' IEEE Trans. Elec. Dev., ED-18, pp. 425-431, 1971
  10. T. G. M. Kleinpenning, 'Location of Low-Frequency Noise Sources in Submicron Bipolar Transistors,' IEEE Trans. Elec. Dev., ED-39, pp. 1501-1506, 1993 https://doi.org/10.1109/16.137332
  11. D. J. Roulston, Bipolar Semiconductor Devices, McGraw-Hill., 1990