대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

박막트랜지스터의 채널 내에 형성된 금속 유도 측면 결정화의 경계가 누설전류에 미치는 영향

Effect of Metal-Induced Lateral Crystallization Boundary Located in the TFT Channel Region on the Leakage Current

  • 김태경 (서울대학교 재료공학부) ;
  • 김기범 (서울대학교 재료공학부) ;
  • 윤여건 (서울대학교 재료공학부) ;
  • 김창훈 (서울대학교 재료공학부) ;
  • 이병일 (서울대학교 재료공학부) ;
  • 주승기 (서울대학교 재료공학부)
  • Kim, Tae-Gyeong (School of Materials Science and Engineering, Seoul National School) ;
  • Kim, Gi-Beom (School of Materials Science and Engineering, Seoul National School) ;
  • Yun, Yeo-Geon (School of Materials Science and Engineering, Seoul National School) ;
  • Kim, Chang-Hun (School of Materials Science and Engineering, Seoul National School) ;
  • Lee, Byeong-Il (School of Materials Science and Engineering, Seoul National School) ;
  • Ju, Seung-Gi (School of Materials Science and Engineering, Seoul National School)
  • 발행 : 2000.04.01
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초록

금속 유도 측면 결정화 (Metal-Induced Lateral Crystallization; MILC)에 의해 저온다결정 실리콘 박막트랜지스터를 형성할 때 Ni박막을 게이트와 소오스/드레인간 경계로부터 거리를 달리하여 형성한 뒤 결정화시킴으로써 소오스와 드레인으로부터 결정화가 진행되어 서로 만나는 경계 면을 채널 내부 외부에 인위적으로 위치시킬 수 있었고 이들의 전기적 특성비교를 통하여 MILC경계가 트랜지스터 특성에 미치는 영향을 고찰할 수 있었다. MILC 경계를 채널 내부로부터 제거시킴으로써 On Current, Subthreshold slope 특성을 향상시킬 수 있었고 누설전류 특성도 크게 향상시킬 수 있었다. 채널 내부에 MILC 경계가 존재할 경우 전기적 스트레스를 인가함에 따라 누설전류의 양이 감소하였고, 전체 감소량은 채널 폭이 넓을수록 증가하였고 채널길이에는 무관하였다.

In the case of metal-induced lateral crystallization (MILC) for low temperature poly-Si TFT, offset length between Ni-thin film and the sides of gate could be modified to control the location of MILC boundary. Electrical characteristics were compared to analyze the effect of MILC boundary that was located either in or out of the channel region of the TFT. By removing the MILC boundary from channel region, on current, subthreshold slope and leakage current properties could be improved. When MILC boundary was located in the channel region, leakage current was reduced with electrical stress biasing. The amount of reduction increased as the channel width increased, but it was independent of the channel length.

키워드

참고문헌

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