Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

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Deposition and Characteristics of TiN Thin Films by Atomic Layer Epitaxy

ALE 법에 의한 TiN 박막의 증착 및 특성

  • Kim, Dong-Jin (School of Electronic & Electrical Engineering Kyungpook National University) ;
  • Jung, Young-Bae (School of Electronic & Electrical Engineering Kyungpook National University) ;
  • Lee, Myung-Bok (School of Electronic & Electrical Engineering Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electronic & Electrical Engineering Kyungpook National University) ;
  • Lee, Yong-Hyun (School of Electronic & Electrical Engineering Kyungpook National University) ;
  • Hahm, Sung-Ho (Sensor Technology Research Center, Kyungpook National University) ;
  • Lee, Jong-Hwa (R & D Center, Photo mask Division, R.K. LTD.)
  • 김동진 (慶北大學校 電子電氣工學部) ;
  • 정영배 (慶北大學校 電子電氣工學部) ;
  • 이명복 (慶北大學校 電子電氣工學部) ;
  • 이정희 (慶北大學校 電子電氣工學部) ;
  • 이용현 (慶北大學校 電子電氣工學部) ;
  • 함성호 (慶北大學校 센서 技術 硏究所) ;
  • 이종화 (피케이株式會社 포토마스크 事業附屬 硏究所)
  • Published : 2000.06.01
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Abstract

The TiN thin films were deposited by ALE(atomic layer epitaxy) on (100) silicon substrate. The TiN thin films were characterized by means of XRD, 4-point probe, AFM, AES and SEM. TEMAT(terakis(ethyl methy lamino)titanium) and $NH_3$ were injected into the reactor in sequence of TEMAT-$N_2-NH_3-N_2$ to ensure a saturated surface reaction. As a result, the depostion rate of the TiN film was controlled by self-limiting growth mechanism at temperature range form 150 to 220 $^{\circ}C$. Deposited TiN films, all of which show amorphous structure, had a fixed deposition rate of 4.5 ${\AA}$/cycle. The resistivity of 210 ~ 230 ${\mu}{\Omega}{\cdot}$cm and the surface r.m.s. roughness of 7.9 ~ 9.3 ${\AA}$ were measured. When TiN film of 2000 ${\AA}$ were deposited, a excellent step coverage were observed in a trench structure of 0.43${\mu}m$ contacts with 6:1 aspect ratio.

ALE(atomic layer epitaxy)법을 이용하여 (100)면의 Si 기판위에 TiN 박막을 증착하였다. 증착된 TiN 박막을 XRD, 4-point probe, AFM, AES, SEM등의 장비를 사용하여 분석하였다. ALE법에 의한 TiN의 증착을 위한 반응 전구체(precusor)로는 TEMAT(tetrakis (ethylmethylamino)titanium)와 반응 가스로는 $NH_3$를 사용하였다. 표면 포화반응을 형성하기 위해 각 반응 기체는 TEMAT-$N_2-NH_3-N_2$의 순서로 교대로 반응로에 주입하였다. 그 결과 TiN 박막은 150 ~ 220 $^{\circ)C$에서 자기 제어 성장(self-limiting growth) 기구에 의한 박막 증착 특성을 보였다. 증착된 TiN 박막은 증착율이 4.5 ${\AA}$/ cycle로 일정하였고, 비정질 (amorphous)의 구조를 보였다. 박막의 저항율과 표면 평균 거칠기는 210~230${\mu}{\Omega}{\cdot}$cm와 7.9~9.3${\AA}$로 측정되었다. TiN 박막을 2000 ${\AA}$의 두께로 증착하였을 때, 폭이 0.43${\mu}$m이고 단차비 (aspect ratio)가 6인 트렌치 구조에서 매우 우수한 단차피복성을 보였다.

Keywords

References

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