KIEE International Transactions on Electrophysics and Applications

The Korean Institute of Electrical Engineers (대한전기학회)
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Fractal Analysis of the Surface in Thin Film Capacitors

  • Hong, Kyung-Jin (Division of Computer, Electronics & Communication Engineering) ;
  • Min, Yong-Ki (Division of Computer, Electronics & Communication Engineering) ;
  • Cho, Jae-Cheol (Department of Electronics, Chodang University, Chonnam)
  • Published : 2001.06.01

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Abstract

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Sio$_2$/Si substrate at 4,000 [rpm] for 10 seconds. The structural characteristics of the surface were analyzed by fractal dimension. The thickness of BST ceramics thin films was about 260∼280 [nm]. The property of the leakage current was stable with 10-9∼10-11[A] when the applied voltage was 0∼3[V]. BST thin films ha low leakage current properties when fractal dimension was low and a coating area was high.

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