Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Metalorganic VPE growth of GaInP and related semiconductors for mobile communication device application

  • Published : 2001.10.01
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Abstract

Metal-organic VPE (MOVPE) epitaxial growth procedure and related device fabrication technique are reported for GaInP-based epitaxial materials and devices. For GaInP/GaInAs two-dimensional electron-gas field-effect transistor (TEGFET), a promising epitaxial stacking structure resulting in enhanced electron mobility is given. In conjunction with this, a new device fabrication technique to improve luminous intensity of GaInP-based LED is also shown.

Keywords

References

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  2. The 1st Asian Conference on Crystal Growth and Crystal Technology (CGCT-1,2000) Low-pressure Organometallic VPE Growth of Ga₁In₄P Using Trimethylindium Solution Source M. Kimura;N. Aihara;T. Okano;A. Kasahara;T. Udagawa;H. Azuhata;A. Sawada;T. Takamasu
  3. J. Crystal Growth 221 High-power Ohmic-electrodes Dispersive AlGaInP Double-hetero Structure Yellowish-green Light-emitting Diodes Y. Hosokawa;W. Nabekura;T. Hoshina;R. Takeuchi;K. Sakaue;T. Udagawa