Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Dielectric Characteristics of the ${Ta_2}{O_5}/{Al_2}{O_3}$ Multilayer Thin Films Processed by Reactive Sputtering

반응성 스퍼터링으로 제조한 ${Ta_2}{O_5}/{Al_2}{O_3}$ 다충박막의 유전특성

  • Choe, Jae-Hun (Dept of Materials Science and Engineering, Hong Ik University) ;
  • O, Tae-Seong (Dept of Materials Science and Engineering, Hong Ik University)
  • 최재훈 (홍익대학교 공과대학 신소재공학과) ;
  • 오태성 (홍익대학교 공과대학 신소재공학과)
  • Published : 2001.12.01
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Abstract

Dielectric properties and leakage current characteristics of 100 nm-thick $Ta_2O_5/Al_2O_3$multilayer thin films, which were fabricated by reactive sputtering of$Al_2O_3$and$Ta_2O_5$ successively on top of each other for total 9 layers, have been investigated with variation of the$Al_2O_3$content$(i.e,\;Ta_2O_5/Al_2O_3 \;thickness\;ratio)$.$Ta_2O_5/Al_2O_3$films were amorphous regardless of the$Al_2O_3$content. With increasing the$Al_2O_3$content from 0% to 100%, refractive index of the $Ta_2O_5/Al_2O_3$films decreased linearly from 2.03 to 1.56 and dielectric constant was lowered from 23.9 to 7.7 Variation of the dielectric constant with the$Al_2O_3$content was in good agreement with the behavior that was obtained by assuming parallel capacitors of$Al_2O_3$and Ta_2O_5$. Leakage current characteristics of $Ta_2O_5/Al_2O_3$ multilayer films were superior to those of $Ta_2O_5$ and$Al_2O_3$films. $Ta_2O_5/Al_2O_3$ films of 5% and 10%$Al_2O_3$content exhibited excellent leakage current densities which were lower than $10^{-7} A/cm^2$ at 1MV/cm.

Keywords

References

  1. S. Shibata, Thin Solid Films, 227, 1 (1996) https://doi.org/10.1016/0040-6090(95)08234-4
  2. V. Mikhaelashvili, Y. Betzer, I. Prudnikov, M. Orenstein, D. Ritter, and G. Eisenstein, J. Appl. Phys., 84, 6747 (1998) https://doi.org/10.1063/1.369002
  3. S.H. Kim, C.E. Kim, and Y.J. Oh, Thin Solid Films, 305, 321 (1997) https://doi.org/10.1016/S0040-6090(97)00034-5
  4. T. Yasumoto, N. Yanase, K. Abe and T. Kawakubo, Jpn. J. Appl. Phys., 39, 5369 (2000) https://doi.org/10.1143/JJAP.39.5369
  5. S. Hazumi, T. Asano, M. Hattori and H. Nakashima, Jpn. J. Appl. Phys., 34, 5086 (1995) https://doi.org/10.1143/JJAP.34.5086
  6. J.Y. Zhang and I.W. Boyd, Appl. Phys., A70, 657 (2000)
  7. S.D. Cho and K.W. Paik, Mater. Sci. Eng., B67, 108 (1999) https://doi.org/10.1016/S0921-5107(99)00330-X
  8. J. Gottmann and E.W. Kreutz, Surf. Coat. Technol., 116, 1189 (1999) https://doi.org/10.1016/S0257-8972(99)00191-7
  9. V.A.C. Haanappel, D.v.d. Vendel, H.S.C. Metselaar, H.D.van Corbach, T. Fransen and P.J. Gellings, Thin Solid Films, 254, 153 (1995) https://doi.org/10.1016/0040-6090(94)06241-C
  10. V.A.C. Haanappel, H.D. van Corbach, T. Fransen and P.J. Gellings, Surf. Coat. Technol., 72, 13 (1995) https://doi.org/10.1016/0257-8972(94)02328-N
  11. F. Chiu, J. Wang, J.Y. Lee and S.C. Wu, J. Appl. Phys., 81, 6911 (1997) https://doi.org/10.1063/1.365252
  12. M. Ritala, H. Saloniemi, M. Leskela, T. Prohaska, G. Friedbacher and M. Grasserbauer, Thin Solid Films, 286, 54 (1996) https://doi.org/10.1016/S0040-6090(95)08524-6
  13. C. Isobe and M. Saitoh, Appl. Phys. Lett., 56, 907 (1990) https://doi.org/10.1063/1.103323
  14. J.Y. Kim, Bull. Kor. Ceram. Soc., 11, 138 (1996)
  15. Z. Jin, H.S. Kwok, and M. Wong, IEEE Electron Device Lett., 19, 502 (1998) https://doi.org/10.1109/55.735760
  16. P. Alexandrov, J. Koprinarove, and D. Todorov, Vacuum, 47, 1333 (1996) https://doi.org/10.1016/S0042-207X(96)00196-0
  17. K. Koski, J. Holsa, and P. Juliet, Thin Solid Films, 339, 240 (1999) https://doi.org/10.1016/S0040-6090(98)01232-2
  18. J.M. Schneider, W.D. Sproul, R.W.J. Chia, M.S. Wong, and A. Matthews, Surf. Coat. Technol., 96, 262 (1997) https://doi.org/10.1016/S0257-8972(97)00152-7
  19. P.V. Patil, D.M. Bendale, R.K. Puri, and V. Puri, Thin Solid Films, 288, 120 (1996) https://doi.org/10.1016/S0040-6090(96)08855-4
  20. W.D. Kingery, H.K. Browen and D.R. Uhlmann, Introduction to Ceramics, 2nd ed., p. 947, Wiley, U.S.A. (1976)
  21. S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era Vol. 1, p. 220, Lattice Press, U.S.A, (1986)
  22. B. G rard Segda, M. Jacquet, C. Caapera, G. Baud and J. Pierre Besse, Nucl. Instr. and Meth. in Phys. Res., B170, 105 (2000)