Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Refractive Index Control of Silicon Oxynitride Thick Films on Core Layer of Silica Optical Waveguide

실리카 광도파로의 Core층인 Silicon Oxynitride후박의 굴절률 제어

  • 김용탁 (성균관대학교 신소재공학과) ;
  • 조성민 (성균관대학교 신소재공학과) ;
  • 윤석규 (성균관대학교 신소재공학과) ;
  • 서용곤 (전자부품연구원 광부품연구센터) ;
  • 임영민 (전자부품연구원 광부품연구센터) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • Published : 2002.06.01
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Abstract

Silicon Oxynitride(SiON) thick films on p-type silicon(100) wafers have obtained by using plasma-enhanced chemical vapor deposition from SiH$_4$ , N$_2$O and N$_2$. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4620 to 1.5312. A high deposition power of 180 W leads to deposition rates of up to 5.92${\mu}$m/h. The influence of the deposition condition on the chemical composition was investigated using X-ray photoelectron spectroscopy. After deposition of the SiON thick films, the films were annealed at 1050$^{\circ}C$ in a nitrogen atmosphere for 2 h to remove absorption band near 1.5${\mu}$m.

플라즈마 화학기상증착(PECVD)법을 이용하여 p-type Si(100) 웨이퍼에 Silicon Oxynitride(SiON) 후막을 SiH$_4$ , $N_2$O, $N_2$ 가스를 혼합하여 증착하였다. Prism coupler측정을 통해 SiON 후막의 굴절률 1.4620~1.5312을 얻었으며, rf power가 180 W에서 5.92$\mu$m/h의 증착률을 나타내었다. 증착변수에 따른 화학적 조성의 영향은 X-ray Photoelectron Spectroscopy(XPS) 을 통하여 관찰하였다. 또한, SiON 후막 증착후에 $1.5\mu$m 부근의 흡수띠를 제거하기 위해 105$0^{\circ}C$의 $N_2$ 분위기에서 2시간 동안 열처리를 행하였다.

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