Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Thermally Assisted Carrier Transfer and Field-induced Tunneling in a Mg-doped GaN Thin Film

Mg가 첨가된 GaN 박막에서 캐리어 전이의 열적도움과 전계유도된 터러링 현상

  • 정상근 ((주)에이티씨 기술연구소) ;
  • 김윤겸 ((주)에이티씨 기술연구소) ;
  • 신현길 ((주)에이티씨 기술연구소)
  • Published : 2002.06.01
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Abstract

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

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