Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Behavior of Ag+ and Sn2+ After Reaction Between the Transparent Dielectric PbO-B2O3-SiO2-Al2O3 and Ag Electrodes

투명 유전체 (PbO-B2O3-SiO2-Al2O3 계)와 Ag 전극과의 반응에 의한 Ag+과 Sn2+의 거동

  • 홍경준 (경북대학교 공과대학 금속공학과) ;
  • 박준현 (순천대학교 공과대학 재료·금속공학과) ;
  • 허증수 (경북대학교 공과대학 금속공학과) ;
  • 김형준 (순천대학교 공과대학 재료·금속공학과)
  • Published : 2002.05.01
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Abstract

A transparent dielectric of the $PbO-B_2O_3-SiO_2-A1_2O_3$ system which was a low melting glass has been used for PDP (Plasma Display Panel), but it has a problem which is a reaction to be occurred between a transparent dielectric layer and electrodes (Ag, ITO) after firing. This research was conducted for ion migration of $Ag^+\$ and $Sn^ {2+}$ during firing three different frits of low melting glass. The result showed that yellowing phenomena occurred through a chemical reaction between $Ag^+\$and $Sn^ {2+}$ at 550~58$0^{\circ}C$ for 20~60 min. In addition, it was confirmed that the migration of $Sn^{2+}$ from ITO electrode made a strong effect on the yellowing phenomena.

Keywords

References

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  1. Effect of Frit Content in Ag Paste and Thickness of Transparent Dielectric on Yellowing Phenomenon vol.510-511, pp.1662-9752, 2006, https://doi.org/10.4028/www.scientific.net/MSF.510-511.506