Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/GaN Multi-layers

MOCVD 성장조건이 InN/GaN 다층박막의 발광세기에 미치는 영향

  • Kim, Hyeon-Su (Department of Physics, Gyeongsang National University) ;
  • Lee, Jeong-Ju (Department of Physics, Gyeongsang National University) ;
  • Jeong, Sun-Yeong (Department of Physics, Gyeongsang National University) ;
  • Lee, Jeong-Yong (Dept. of Materials Engineering, Korea Advanced Institute of Science and Technology) ;
  • Lin, J.Y. (Department of Physics, Kansas State University) ;
  • Jiang, H.X. (Department of Physics, Kansas State University)
  • 김현수 (경상대학교 자연과학대학 물리학과) ;
  • 이정주 (경상대학교 자연과학대학 물리학과) ;
  • 정순영 (경상대학교 자연과학대학 물리학과) ;
  • 이정용 (한국과학기술원 전자재료공학과) ;
  • ;
  • Published : 2002.03.01
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Abstract

InN/GaN multi-layers were grown by metalorganic chemical vapor deposition(MOCVD) in order to get the appropriate structure for an high power blue-green light emitting diode(LED), and effects of growth conditions (growth temperature, pressure, and $trimethylindium(TMIn)-NH_3-N_2\; flow\; rare)$ on the integrated photoluminescence (PL) intensity and PL peak energy in InN/GaN multi-layers were investigated. The optimized growth conditions with the highest integrated PL intensity for InN/GaN multi-layers were obtained: the growth temperature at $780^{\circ}C$, the growth pressure at 325 Torr, the TMIn flow rate with 150 $m\ell$/min, the $NH_3$flow rate with 3.2 ι/min, and $N_2$ flow rate with 2 ι/min.

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References

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