The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Analysis of Invesion Layer Quantization Effects in NMOSFETs

NMOSFET의 반전층 양자 효과에 관한 연구

  • Park, Ji-Seon (Dept.of Information communication, Ewah Wonan's University) ;
  • Sin, Hyeong-Sun (Dept.of Information communication, Ewah Wonan's University)
  • 박지선 (이화여자대학교 정보통신학과) ;
  • 신형순 (이화여자대학교 정보통신학과)
  • Published : 2002.09.01
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Abstract

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

Keywords

References

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