Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Electrical Characteristics of the Fabricated Lateral Trench Electrode IGBT with p+ Diverter

효율적인 p+ 다이버터를 갖는 수평형 트렌치 전극형 IGBT의 제작에 따른 전기적 특성에 관한 연구

  • Published : 2002.09.01
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Abstract

A new lateral trench LTEIGBT with p+ diverter was proposed to suppress latch-up of LTIGBT The p+ diverter was placed between the anode and cathode electrode. The latch-up of LTEICBT with a p+ diverter was effectively suppressed to sustain an anode voltage of 8.7V and a current density of 1453A/$\textrm{cm}^2$ while in the conventional LTIGBT, latch-up occured at an anode current density of 540A/$\textrm{cm}^2$. In addition, the forward blocking voltage of the proposed LTEIGBT with a p+ diverter was about 140V. The forward blocking voltage of the conventional LTIGBT of the same size was no more than 105V, We fabricated the proposed LTEIGBT with a p+ diverter after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT with a p+ diverter and the conventional LIGBT are 90㎃ and 70㎃, respectively, at the same breakdown voltage of 150V.

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References

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